IEEE - Institute of Electrical and Electronics Engineers, Inc. - Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity

Author(s): M.R. Shaneyfelt ; J.R. Schwank ; D.M. Fleetwood ; R.L. Pease ; J.A. Felix ; P.E. Dodd ; M.C. Maher
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2004
Volume: 51
Page(s): 3,172 - 3,177
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2004.839200
Regular:

The post-irradiation annealing behavior of total dose degradation in LM139 comparators fabricated in National Semiconductor Corporation's (NSC) enhanced low-dose-rate sensitive (ELDRS) linear... View More

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