IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bulk damage in DMILL npn bipolar transistors caused by thermal neutrons versus protons and fast neutrons

Author(s): I. Mandic ; V. Cindro ; G. Kramberger ; E.S. Kristof ; M. Mikuz ; D. Vrtacnik ; M. Ullan ; F. Anghinolfi
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2004
Volume: 51
Page(s): 1,752 - 1,758
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2004.832927
Regular:

DMILL bipolar transistors (npn) were exposed to 24 GeV protons and fast and thermal neutrons to fluences up to 6/spl middot/10/sup 14/ n/cm/sup 2/. Transistor common emitter current gain (/spl... View More

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