IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions

Author(s): I.L. Prejbeanu ; W. Kula ; K. Ounadjela ; R.C. Sousa ; O. Redon ; B. Dieny ; J.-P. Nozieres
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2004
Volume: 40
Page(s): 2,625 - 2,627
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.2004.830395
Regular:

A thermally assisted writing procedure is proposed in a tunnel junction based magnetic random access memory cell. The magnetic layers of the tunnel junction are both exchange-biased with... View More

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