IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD

Author(s): Jun Zhao ; L. Li ; Wumin Wang ; Yicheng Lu
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2003
Volume: 15
Page(s): 1,507 - 1,509
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/LPT.2003.818660
Regular:

High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic... View More

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