IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fully silicided NiSi gate on La2O3 MOSFETs

Author(s): C.Y. Lin ; M.W. Ma ; A. Chin ; Y.C. Yeo ; Chunxiang Zhu ; M.F. Li ; Dim-Lee Kwong
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2003
Volume: 24
Page Count: 3
Page(s): 348 - 350
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2003.812569
Regular:

We have fabricated the fully silicided NiSi on La/sub 2/O/sub 3/ for n- and p-MOSFETs. For 900/spl deg/C fully silicided CoSi/sub 2/ on La/sub 2/O/sub 3/ gate dielectric with 1.5 nm EOT, the gate... View More

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