IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers

Author(s): S. Saito ; T. Kimura ; T. Tanabe ; K. Suto ; Y. Oyama ; J.-I. Nishizawa
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Volume: 21
Page Count: 6
Page(s): 170 - 175
ISSN (Paper): 0733-8724
ISSN (Online): 1558-2213
DOI: 10.1109/JLT.2003.808644
Regular:

We have fabricated GaP-AlGaP tapered waveguide semiconductor Raman amplifiers, and analyzed the effect of tapering in pulse-pumped high-gain operation. The finesse measurement and 80-ps pulse... View More

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