IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of /spl gamma/-rays on JFET devices and circuits fabricated in a detector-compatible Process

Author(s): G.F.D. Betta ; M. Manghisoni ; L. Ratti ; V. Re ; V. Speziali ; G. Traversi
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2003
Volume: 50
Page Count: 7
Page(s): 2,474 - 2,480
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2003.820631
Regular:

This work is concerned with the effects of /spl gamma/-rays on the static, signal and noise characteristics of JFET-based circuits belonging to a fabrication technology made available by the... View More

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