IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation study of single-event gate rupture using radiation-hardened stripe cell power MOSFET structures

Author(s): J.L. Titus ; Yen-Sheng Su ; M.W. Savage ; R.V. Mickevicius ; C.F. Wheatley
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2003
Volume: 50
Page Count: 9
Page(s): 2,256 - 2,264
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2003.821584
Regular:

A two-dimension simulation study of single-event gate rupture (SEGR) in radiation-hardened stripe cell power MOSFETs is reported. Simulations are performed on stripe-cell structures employing... View More

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