IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dynamic behavior of the charge-to-voltage conversion in Si-drift detectors with integrated JFETs

Author(s): K. Hansen ; C. Reckleben
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2003
Volume: 50
Page Count: 7
Page(s): 1,718 - 1,724
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2003.818268
Regular:

We report on the transient behavior of the charge-to-voltage conversion of a silicon drift detector with an integrated JFET in a source follower configuration, suitable for X-ray spectroscopy and... View More

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