IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions

Author(s): A. Czerwinski ; E. Simoen ; A. Poyai ; C. Claeys ; H. Ohyama
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2003
Volume: 50
Page Count: 10
Page(s): 278 - 287
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2003.809469
Regular:

It will be shown that an analysis of gated-diode (GD) structures enables to investigate the radiation damage in different parts of p-n junctions in a CMOS technology. This is important as the... View More

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