IEEE - Institute of Electrical and Electronics Engineers, Inc. - Applying amorphous CoNbZr shield to improve the dielectric-breakdown voltage of the gap layers of narrow-gap read heads

Author(s): K. Hoshino ; S. Odai ; M. Hatatani
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2003
Volume: 39
Page Count: 3
Page(s): 2,393 - 2,395
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.2003.815460
Regular:

We investigated the dependence of the dielectric-breakdown voltage of the gap layer on lower shield material. The dielectric breakdown voltage of the gap layer is higher for the test... View More

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