IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single-mode laser diode at 778-nm wavelength: effect of p-doping

Author(s): P.G. Eliseev ; A.A. Chelny ; A.B. Aluev ; E.I. Davydova ; M.Sh. Kobyakova ; A.A. Morozyuk
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2002
Volume: 14
Page(s): 15 - 17
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.974146
Regular:

An AlGaAs-GaAs double quantum well structure has been grown by metal-organic chemical vapor deposition. High p-doping of the cladding layer (4/spl times/10/sup 18/ cm/sup -3/) is used to optimize... View More

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