IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interfacial degradation of epoxy coated silicon nitride

Author(s): Jongwoo Park ; D.G. Harlow
Sponsor(s): IEEE Components, Packaging, and Manufacturing Technology Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2002
Volume: 25
Page Count: 8
Page(s): 470 - 477
ISSN (Paper): 1521-3331
ISSN (Online): 1557-9972
DOI: 10.1109/TCAPT.2002.803651
Regular:

Silicon (Si) wafers passivated with a nitride film, fabricated by low-pressure chemical vapor deposition (LPCVD) and coated with epoxy were used as test specimens to characterize the interfacial... View More

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