IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric

Author(s): E. Lusky ; Y. Shacham-Diamand ; I. Bloom ; B. Eitan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2002
Volume: 23
Page Count: 3
Page(s): 556 - 558
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2002.802599
Regular:

An electrons retention model for localized charge, trapped in ONO stacked dielectric, is introduced utilizing the nitride read-only memory (NROM) device. The observed reduction in threshold... View More

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