IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

Author(s): A.M. Roskowski ; E.A. Preble ; S. Einfeldt ; P.M. Miraglia ; R.F. Davis
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2002
Volume: 38
Page Count: 11
Page(s): 1,006 - 1,016
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.2002.801005
Regular:

Pendeo-epitaxy employs lateral growth from etched seed forms to achieve a marked reduction in dislocation density in a material. In this research, high-resolution X-ray diffraction and atomic... View More

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