IEEE - Institute of Electrical and Electronics Engineers, Inc. - Radiation-induced interface traps in MOS devices: capture cross section and density of states of P/sub b1/ silicon dangling bond centers

Author(s): P.M. Lenahan ; N.A. Bohna ; J.P. Campbell
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2002
Volume: 49
Page Count: 5
Page(s): 2,708 - 2,712
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2002.805357
Regular:

P/sub b/ centers dominate radiation-induced interface defects. On the (100) Si/SiO/sub 2/ interface, the P/sub b0/ center dominates radiation damage, but another center, the P/sub b1/, plays a... View More

Advertisement