IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of charge yield in MOS devices for different radiation sources

Author(s): P. Paillet ; J.R. Schwank ; M.R. Shaneyfelt ; V. Ferlet-Cavrois ; R.L. Jones ; O. Flarrient ; E.W. Blackmore
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2002
Volume: 49
Page Count: 6
Page(s): 2,656 - 2,661
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2002.805438
Regular:

NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons and compared to... View More

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