IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new model for enhancement-mode power pHEMT

Author(s): Ce-Jun Wei ; Y.A. Tkachenko ; D. Bartle
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2002
Volume: 50
Page Count: 5
Page(s): 57 - 61
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/22.981246
Regular:

Optimum loading for a power enhancement-mode pseudomorphic high electron-mobility transistor (E-pHEMT) is determined by a systematic harmonic load-pull simulation. The simulation uses a modified... View More

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