IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides

Author(s): E.Y. Wu ; J.M. McKenna ; W. Lai ; E. Nowak ; A. Vayshenker
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2001
Volume: 22
Page Count: 3
Page(s): 603 - 605
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.974592
Regular:

We report the effect of change of voltage acceleration on temperature dependence of oxide breakdown for ultra-thin oxides below 6 nm. The time- or charge-to-breakdown (T/sub BD//Q/sub BD/) is... View More

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