CES - Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers

Author(s): Wei Qian ; Xi Zhang ; Yongsheng Fu ; Juncheng Lu ; Hua Bai
Publisher: CES
Publication Date: 1 December 2017
Volume: 1
Page(s): 418 - 427
ISSN (Paper): 2096-3564
DOI: 10.23919/TEMS.2017.8241364
Regular:

Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss,... View More

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