IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hooge's parameter in Si NW FET with different widths

2017 International Conference on Noise and Fluctuations (ICNF)

Author(s): I. Zadorozhnyi ; Y. Kutovyi ; H. Hlukhova ; M. Petrychuk ; S. Vitusevich
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Vilnius, Lithuania
Conference Date: 20 June 2017
Page(s): 1 - 4
ISBN (Electronic): 978-1-5090-2760-6
DOI: 10.1109/ICNF.2017.7985991
Regular:

Junctionless p+-p-p+ silicon nanowire (NW) field-effect transistors with various geometries were fabricated. Noise measurements were performed for the samples with different... View More

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