IEEE - Institute of Electrical and Electronics Engineers, Inc. - Selective emitters in Si by single step rapid thermal diffusion for photovoltaic devices

Author(s): S. Sivoththaman ; W. Laureys ; P. De Schepper ; J. Nijs ; R. Mertens
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2000
Volume: 21
Page Count: 3
Page(s): 274 - 276
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.843148
Regular:

Selective phosphorous diffusion is performed in Si to simultaneously form shallow n/sup +/p junctions of different depths in the submicron range by rapid thermal annealing (RTA). Low temperature... View More

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