IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation

Author(s): Y. H. Lin ; Y. Y. Lin ; F. M. Lee ; Y. H. Ho ; K. C. Hsu ; M. H. Lee ; D. Y. Lee ; K. H. Chiang ; C. C. Yang ; C. H. Li ; S. W. Wu ; C. Y. Lei ; C. M. Lin ; C. J. Chen ; K. H. Chen ; H. L. Lung ; K. C. Wang ; T. Y. Tseng ; C. Y. Lu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2017
Volume: 38
Page(s): 1,224 - 1,227
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2017.2732025
Regular:

This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)-sensitivity to operation temperature and random fluctuation of resistance... View More

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