IEEE - Institute of Electrical and Electronics Engineers, Inc. - Epitaxial growth and magnetic properties of Ni/sub 80/Fe/sub 20//Fe/sub 60/Mn/sub 40/ bilayers on H-Si[110] using a Cu buffer layer

Author(s): Congxiao Liu ; Chengtao Yu ; Huaming Jiang ; G.J. Mankey
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2000
Volume: 36
Page Count: 3
Page(s): 2,896 - 2,898
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/20.908620
Regular:

A very thin Cu (/spl sim/1 nm) buffer layer on Si[110] is enough to induce Ni/sub 80/Fe/sub 20//Fe/sub 60/Mn/sub 40/ [111] epitaxial growth. The film surface roughness increases with increasing Cu... View More

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