IEEE - Institute of Electrical and Electronics Engineers, Inc. - Short channel epi-MOSFET model

Author(s): K. Suzuki
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2000
Volume: 47
Page Count: 7
Page(s): 2,372 - 2,378
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.887024
Regular:

We show how threshold voltages and the electric field perpendicular to a channel are controlled by varying the thickness of the epi-layer in long epitaxial channel MOSFET devices (epi-MOSFETs).... View More

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