IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 /spl mu/m

Author(s): N.R. Das ; P.K. Basu ; M.J. Deen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2000
Volume: 47
Page Count: 9
Page(s): 2,101 - 2,109
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.877172
Regular:

A new and simple approach has been proposed for the design optimization of devices using PSPICE, and it has been applied to the design of high electron mobility transistors (HEMTs) and... View More

Advertisement