IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low frequency conductance voltage analysis of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors

Author(s): A. Neugroschel ; Guoxin Li ; Chih-Tang Sah
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Volume: 47
Page Count: 10
Page(s): 187 - 196
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.817585
Regular:

Low-frequency-conductance-voltage (LFGV) method for analysis of heterojunction bipolar transistors (HBTs) is presented. The method gives accurate quantitative values for the important... View More

Advertisement