IEEE - Institute of Electrical and Electronics Engineers, Inc. - 14-nm FinFET Technology for Analog and RF Applications

Author(s): Jagar Singh ; J. Ciavatti ; K. Sundaram ; J. S. Wong ; A. Bandyopadhyay ; X. Zhang ; S. Li ; A. Bellaouar ; J. Watts ; J. G. Lee ; S. B. Samavedam
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2017.2776838
Regular:

This paper describes the features and performance of an analog and RF device technology development on a 14-nm logic FinFET platform. An optimized single-side gate contact RF device layout shows a... View More

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