IEEE Computer Society - Recent Technology Advances of Emerging Memories

Author(s): Yiran Chen ; Hai Li ; Ismail Bayram ; Enes Eken
Publisher: IEEE Computer Society
Publication Date: 1 June 2017
Volume: 34
Page(s): 8 - 22
ISSN (Paper): 2168-2356
ISSN (Online): 2168-2364
DOI: 10.1109/MDAT.2017.2685381
Regular:

Phase change memory, spin-transfer torque random access memory, and resistive random access memory are three major emerging memory technologies that receive tremendous attentions from both... View More

Advertisement