IEEE Computer Society - Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM

Author(s): Mouhamad Alayan ; Elisa Vianello ; Barbara de Salvo ; Luca Perniola ; Andrea Padovani ; Luca Larcher
Publisher: IEEE Computer Society
Publication Date: 1 June 2017
Volume: 34
Page(s): 23 - 30
ISSN (Paper): 2168-2356
ISSN (Online): 2168-2364
DOI: 10.1109/MDAT.2017.2682246
Regular:

Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors... View More

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