IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

Author(s): T.C. Newell ; D.J. Bossert ; A. Stintz ; B. Fuchs ; K.J. Malloy ; L.F. Lester
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1999
Volume: 11
Page(s): 1,527 - 1,529
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.806834
Regular:

Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained quantum well... View More

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