CES - Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications

Author(s): Lucas Lu ; Guanliang Liu ; Kevin Bai
Publisher: CES
Publication Date: 1 September 2017
Volume: 1
Page(s): 283 - 291
ISSN (Paper): 2096-3564
DOI: 10.23919/TEMS.2017.8086107
Regular:

Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an... View More

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