IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFETs by light emission measurements

Author(s): M. Pavesi ; L. Selmi ; M. Manfredi ; E. Sangiorgi ; M. Mastrapasqua ; J.D. Bude
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1999
Volume: 20
Page Count: 3
Page(s): 595 - 597
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.798055
Regular:

This letter reports direct experimental evidence that the high-energy tail of the hot carrier luminescence distribution of deep submicron silicon MOSFETs is essentially modified by the application... View More

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