IEEE - Institute of Electrical and Electronics Engineers, Inc. - Amorphous silicon thin-film transistors on compliant polyimide foil substrates

Author(s): H. Gleskova ; S. Wagner
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1999
Volume: 20
Page Count: 3
Page(s): 473 - 475
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.784456
Regular:

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors... View More

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