IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates

Author(s): Jong-Wook Lee ; Hyung-Ki Kim ; Ji-Woon Yang ; Won-Chang Lee ; Jeong-Hee Oh ; Min-Rok Oh ; Yo-Hwan Koh
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1999
Volume: 20
Page Count: 3
Page(s): 176 - 178
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.753758
Regular:

The hole mobility of LOCOS-isolated thin-film silicon-on-insulator (SOI) p-channel MOSFET's fabricated on SOI substrates with different buried oxide thickness has been investigated. Two... View More

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