IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new bottom-gated poly-Si thin-film transistor

Author(s): Kwon-Young Choi ; Kee-Chan Park ; Cheol-Min Park ; Min-Koo Han
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1999
Volume: 20
Page Count: 3
Page(s): 170 - 172
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.753756
Regular:

We have proposed and fabricated the new bottom-gated poly-Si TFT with a partial amorphous-Si (a-Si) region by employing the selective laser annealing. The channel layer of the proposed TFTs is... View More

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