IEEE - Institute of Electrical and Electronics Engineers, Inc. - Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

Author(s): C.R. Bolognesi ; N. Matine ; R.W. Dvorak ; X.G. Xu ; J. Hu ; S.P. Watkins
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1999
Volume: 20
Page Count: 3
Page(s): 155 - 157
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.753751
Regular:

We have developed lattice-matched InP/GaAs/sub 0.51/Sb/sub 0.49//InP NpN double heterojunction bipolar transistors (DHBTs) which take advantage of the staggered ("type II") band lineup at... View More

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