IEEE - Institute of Electrical and Electronics Engineers, Inc. - The formation of Ti-polycide gate structure with high thermal stability using chemical-mechanical polishing (CMP) planarization technology

Author(s): Hyoung-Sub Kim ; Dae-Hong Ko ; Dae-Lok Bae ; K. Fujihara ; Ho-Kyu Kang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1999
Volume: 20
Page Count: 3
Page(s): 86 - 88
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.740660
Regular:

A planarized Ti-polycide gate structure with high thermal stability has been developed using a chemical-mechanical polishing (CMP) process for the application of high-speed DRAM devices. For a... View More

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