IEEE - Institute of Electrical and Electronics Engineers, Inc. - W-band InP HEMT MMICs using finite-ground coplanar waveguide (FGCPW) design

Author(s): M. Yu ; M. Matloubian ; P. Petre ; L.R. Hamilton ; R. Bowen ; M. Lui ; H.-C. Sun ; C.M. Ngo ; P. Janke ; D.W. Baker ; R.S. Robertson
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1999
Volume: 34
Page Count: 7
Page(s): 1,212 - 1,218
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/4.782078
Regular:

In this paper, we report on the development of W-band monolithic microwave integrated circuit (MMIC) power amplifiers using 0.1-/spl mu/m AlInAs/GaInAs/InP high electron mobility transistor (HEMT)... View More

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