IEEE - Institute of Electrical and Electronics Engineers, Inc. - Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Author(s): Pin-Fan Chen ; U.-M.T. Hsin ; R.J. Welty ; P.M. Asbeck ; R.L. Pierson ; P.J. Zampardi ; W.-J. Ho ; M.C. Vincent Ho ; M.F. Chang
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1999
Volume: 47
Page Count: 6
Page(s): 1,433 - 1,438
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/22.780391
Regular:

Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP... View More

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