IEEE - Institute of Electrical and Electronics Engineers, Inc. - Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements

Author(s): A. Pacelli ; S. Villa ; A.L. Lacaita ; L.M. Perron
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1999
Volume: 46
Page Count: 7
Page(s): 1,029 - 1,035
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.760413
Regular:

1/f noise measurements can be a viable method for the characterization of the oxide state density in MOSFETs, being directly applicable to submicron-scale devices. In this work we address the... View More

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