IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation

Author(s): A. Bandyopadhyay ; S. Subramanian ; S. Chandrasekhar ; A.G. Dentai ; S.M. Goodnick
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1999
Volume: 46
Page Count: 9
Page(s): 850 - 858
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.760389
Regular:

The dc characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBTs) are studied under high-energy (/spl sim/1 MeV) electron irradiation up to a fluence of 14.8/spl times/10/sup... View More

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