IEEE - Institute of Electrical and Electronics Engineers, Inc. - Current status of silicon carbide based high-temperature gas sensors

Author(s): A. Lloyd ; P. Tobias ; A. Baranzahi ; P. Martensson ; I. Lundstrom
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1999
Volume: 46
Page Count: 6
Page(s): 561 - 566
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.748877
Regular:

Silicon carbide (SiC) based field effect gas sensors can be operated at very high temperatures. Catalytic metal-insulator-silicon carbide (MISiC) Schottky diodes respond very fast to a... View More

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