IEEE - Institute of Electrical and Electronics Engineers, Inc. - Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

Author(s): D. Defives ; O. Noblanc ; C. Dua ; C. Brylinski ; M. Barthula ; V. Aubry-Fortuna ; F. Meyer
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1999
Volume: 46
Page Count: 7
Page(s): 449 - 455
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.748861
Regular:

Forward density-voltage (J-V) measurements of titanium/4H-SiC Schottky rectifiers are presented in a large temperature range. While some of the devices present a behavior in accordance with the... View More

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