IEEE - Institute of Electrical and Electronics Engineers, Inc. - Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFETs

Author(s): Ying Shi ; T.P. Ma ; S. Prasad ; S. Dhanda
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1998
Volume: 19
Page Count: 3
Page(s): 391 - 393
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.720196
Regular:

The gate tunneling leakage current in dual-gate CMOSFETs exhibits strong polarity dependence when measured in inversion, although it exhibits practically no polarity dependence when measured in... View More

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