IEEE - Institute of Electrical and Electronics Engineers, Inc. - AC floating-body effects in submicron fully depleted (FD) SOI nMOSFETs and the impact on analog applications

Author(s): Ying-Che Tseng ; W.M. Huang ; D.C. Diaz ; J.M. Ford ; J.C.S. Woo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1998
Volume: 19
Page Count: 3
Page(s): 351 - 353
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.709641
Regular:

We report the impact of submicron fully depleted (FD) SOI MOSFET technology on device AC characteristics and the resultant effects on analog circuit issues. The weak DC kink and high frequency AC... View More

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