IEEE - Institute of Electrical and Electronics Engineers, Inc. - Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs

Author(s): G. Niu ; J.D. Cressler ; U. Gogineni ; D.L. Harame
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1998
Volume: 19
Page Count: 3
Page(s): 288 - 290
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.704402
Regular:

The collector-base junction avalanche multiplication factor (M-1) in SiGe HBTs is investigated using a new technique better tolerant to self-heating and collector-base leakage. The new technique... View More

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