IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-power 10-GHz operation of AlGaN HFET's on insulating SiC

Author(s): G.J. Sullivan ; M.Y. Chen ; J.A. Higgins ; J.W. Yang ; Q. Chen ; R.L. Pierson ; B.T. McDermott
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1998
Volume: 19
Page Count: 3
Page(s): 198 - 200
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.678543
Regular:

We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10 GHz was measured from a 1280-/spl mu/m... View More

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