IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaAs MESFET fabrication without using photoresist

Author(s): K. Shiralagi ; R. Tsui ; H. Goronkin
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1998
Volume: 19
Page Count: 3
Page(s): 57 - 59
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.658604
Regular:

MBE-grown MESFET wafers were patterned with a novel resistless approach and InAs was selectively grown in the source and drain regions. Photoresist and the associated process steps and chemicals... View More

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