IEEE - Institute of Electrical and Electronics Engineers, Inc. - A deep submicron Si/sub 1-x/Ge/sub x//Si vertical PMOSFET fabricated by Ge ion implantation

Author(s): K.C. Liu ; S.K. Ray ; S.K. Oswal ; S.K. Banerjee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Volume: 19
Page Count: 3
Page(s): 13 - 15
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.650338
Regular:

We report a deep submicron vertical PMOS transistor using strained Si/sub 1-x/Ge/sub x/ channel formed by Ge ion implantation and solid phase epitaxy. These vertical structure Si/sub 1-x/Ge/sub... View More

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